发明名称 Magnetoresistive element and magnetic memory
摘要 A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
申请公布号 US8299552(B2) 申请公布日期 2012.10.30
申请号 US20080233100 申请日期 2008.09.18
申请人 NAGASE TOSHIHIKO;YOSHIKAWA MASATOSHI;KITAGAWA EIJI;NISHIYAMA KATSUYA;DAIBOU TADAOMI;KISHI TATSUYA;YODA HIROAKI;KABUSHIKI KAISHA TOSHIBA 发明人 NAGASE TOSHIHIKO;YOSHIKAWA MASATOSHI;KITAGAWA EIJI;NISHIYAMA KATSUYA;DAIBOU TADAOMI;KISHI TATSUYA;YODA HIROAKI
分类号 H01L29/82 主分类号 H01L29/82
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