| 发明名称 |
Isolation structure and formation method thereof |
| 摘要 |
An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers. |
| 申请公布号 |
US8298952(B2) |
申请公布日期 |
2012.10.30 |
| 申请号 |
US201213351925 |
申请日期 |
2012.01.17 |
| 申请人 |
WU MING-TSUNG;HONG SHIH-PING;CHENG CHUN-MIN;CHEN YU-CHUNG;HSU HAN-HUI;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU MING-TSUNG;HONG SHIH-PING;CHENG CHUN-MIN;CHEN YU-CHUNG;HSU HAN-HUI |
| 分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
| 代理机构 |
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代理人 |
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