| 摘要 |
In a method for predicting the lifetime of a photo-semiconductor device that has a maximum light output value restricted by thermal saturation, the maximum light output value is extracted by measuring the characteristic of light output from the photo-semiconductor device with respect to drive current. The decrease tendency of the maximum output values with respect to drive time is predicted to predict the lifetime of the photo-semiconductor. Further, the predicted lifetime is updated as time passes. Therefore, in this method, even if drive condition changes, or an individual difference of the photo-semiconductor per se is present, it is possible to substantially accurately predict the lifetime of the photo-semiconductor. |
