发明名称 Trench capacitor
摘要 A trench and method of fabrication is disclosed. The trench shape is cylindrosymmetric, and is created by forming a dopant profile that is monotonically increasing in dopant concentration level as a function of depth into the substrate. A dopant sensitive etch is then performed, resulting in a trench shape providing increased surface area, yet having relatively smooth trench walls.
申请公布号 US8299573(B2) 申请公布日期 2012.10.30
申请号 US20100818448 申请日期 2010.06.18
申请人 PEI CHENGWEN;LI XI;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PEI CHENGWEN;LI XI;WANG GENG
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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