| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for accurately controlling a wafer temperature. <P>SOLUTION: The temperature control method includes the steps of: acquiring a measurement result of a backside film type of a wafer; selecting wafer temperature corresponding to the backside film type of the wafer which is the measurement result and power to be supplied to process the wafer from a first database 330 where the power to be supplied into a chamber, backside film type, and wafer temperature are associated with one another to be stored; and adjusting the wafer temperature based on the selected wafer temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT |
