发明名称 METHOD FOR MAKING EPITAXIAL STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for making a high-quality epitaxial structure with a simple procedure at a low cost. <P>SOLUTION: The method for making the epitaxial structure comprises a first step to provide a substrate 100 having at least one crystal face, a second step to place a carbon nanotube layer 102 having a plurality of openings on the crystal face 101 of the substrate 100, and expose a part of the crystal face 101 of the substrate 100 through the plural openings of the carbon nanotube layer 102, a third step to grow an epitaxial layer 104 on the crystal face 101 of the substrate 100 and cover the carbon nanotube layer 102, and a fourth step to remove the carbon nanotube layer 102. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012206926(A) 申请公布日期 2012.10.25
申请号 JP20110238664 申请日期 2011.10.31
申请人 QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD 发明人 GI YO;FAN FENG-YAN
分类号 C30B25/04;C23C16/34;H01L21/205 主分类号 C30B25/04
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