发明名称 |
MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR |
摘要 |
Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur
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申请公布号 |
US2012270363(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201213344583 |
申请日期 |
2012.01.05 |
申请人 |
JACKREL DAVID;DICKEY KATHERINE;POLLOCK KRISTIN;WOODRUFF JACOB;RYVES LUKE;STONE PETER;BROWN GREGORY |
发明人 |
JACKREL DAVID;DICKEY KATHERINE;POLLOCK KRISTIN;WOODRUFF JACOB;RYVES LUKE;STONE PETER;BROWN GREGORY |
分类号 |
H01L31/0272 |
主分类号 |
H01L31/0272 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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