| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which promptly exhausts unnecessary objects generated in plasma and has good uniformity of processing on a substrate and high productivity. <P>SOLUTION: A plasma processing apparatus includes: a cathode electrode unit and a substrate holding mechanism in a vacuum vessel, and a power source is connected with the cathod electrode unit. The cathod electrode unit includes: a cathode plate 6, a first exhaust chamber 7 located adjacent to the cathode plate, an air supply chamber 8 located adjacent to the first exhaust chamber; and a second exhaust chamber 9 located adjacent to the air supply chamber. The air supply chamber includes a gas inflow port 13, and the second exhaust chamber includes a gas exhaust port 16. The cathode plate includes multiple air supply holes 11 and multiple exhaust holes 12 which penetrate through the cathod plate, and the multiple air supply holes are connected with the air supply chamber through multiple air supply passages 14 penetrating through the first exhaust chamber. The first exhaust chamber is connected with the second exhaust chamber through multiple exhaust passages 15 penetrating through the air supply chamber. <P>COPYRIGHT: (C)2013,JPO&INPIT |
