RESIST PATTERN FORMING METHOD AND METHOD OF MANUFACTURING PATTERNED SUBSTRATE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To form a resist pattern which allows a projection part of a resist pattern after a process of etching a remaining film to have a desired width equal to or larger than a width of the projection part of the resist pattern before the process of etching the remaining film.

SOLUTION: The process of etching the remaining film of a resist film 2 to which an uneven pattern is transferred includes a first etching process of etching the resist film 2 under a condition such that deposits 4 are formed on side walls of projection parts of the resist pattern and the remaining film is etched using first etching gas containing depositing gas producing the deposits 4 during the etching, and the resist film 2 is etched in a process after the first etching process so that widths of the projection parts including the deposits 4 becomes a desired width equal to or larger than widths of the projection parts before the processing of etching the remaining film.

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