发明名称 DEPOSITION METHOD AND RE-SPUTTERING METHOD, AND DEPOSITION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a deposition method and a re-sputtering method capable of suppressing overhang of a frontage of a trench and/or a hole. <P>SOLUTION: The method includes: a step of generating inductive coupling plasma in a processing container by an inductive coupling plasma generation mechanism while introducing a plasma generation gas into the processing container, supplying a DC power from a DC power supply to a metal target, and applying a high-frequency bias to a mounting table by a bias power supply to deposit a metal thin film on a processed substrate on the mounting table; and a step of stopping plasma generation by the inductive coupling plasma generation mechanism and power feeding to the DC power supply, applying a high-frequency bias to the mounting table while introducing the plasma generation gas into the processing container to form a capacity coupling plasma in the processing container, and pulling ions of the plasma generation gas in the processed substrate to re-sputter the deposited metal thin film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209483(A) 申请公布日期 2012.10.25
申请号 JP20110075126 申请日期 2011.03.30
申请人 TOKYO ELECTRON LTD 发明人 SAKUMA TAKASHI;ISHIZAKA TADAHIRO;HATANO TATSUO;HAYASHI SHIRO;FUJISATO TOSHIAKI;YOKOHARA HIROYUKI;TOSHIMA HIROSHI
分类号 H01L21/285;C23C14/58 主分类号 H01L21/285
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