发明名称 |
POLYCRYSTAL SILICON MANUFACTURING APPARATUS |
摘要 |
A polycrystal silicon manufacturing apparatus is disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a heater configured to supply heat to an internal space of the reaction pipe to generate silicon deposition reaction of the silicon particles; a temperature measurement unit configured to measure a temperature inside the reaction pipe; and a power supply unit configured to increase the temperature inside the reaction pipe, when a temperature value measured by the temperature measurement unit is less than a reference temperature value.
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申请公布号 |
US2012266816(A1) |
申请公布日期 |
2012.10.25 |
申请号 |
US201113247481 |
申请日期 |
2011.09.28 |
申请人 |
JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED;SILICONVALUE LLC. |
发明人 |
JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED |
分类号 |
C23C16/24;B05C11/00 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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