发明名称 POLYCRYSTAL SILICON MANUFACTURING APPARATUS
摘要 A polycrystal silicon manufacturing apparatus is disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a heater configured to supply heat to an internal space of the reaction pipe to generate silicon deposition reaction of the silicon particles; a temperature measurement unit configured to measure a temperature inside the reaction pipe; and a power supply unit configured to increase the temperature inside the reaction pipe, when a temperature value measured by the temperature measurement unit is less than a reference temperature value.
申请公布号 US2012266816(A1) 申请公布日期 2012.10.25
申请号 US201113247481 申请日期 2011.09.28
申请人 JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED;SILICONVALUE LLC. 发明人 JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED
分类号 C23C16/24;B05C11/00 主分类号 C23C16/24
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