发明名称 MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR AND MANUFACTURING APPARATUS USED THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a high productivity and minute field effect transistor, a manufacturing method and a manufacturing apparatus therefor. <P>SOLUTION: The manufacturing method of a field effect transistor in which a functional film is formed over a substrate in a printing process including the following steps (1)-(3); the minimum width of a line or a space of the functional film is 1-50 &mu;m and printing positional accuracy is 100 ppm or less. Step (1): filling a groove structure portion corresponding to an image line portion on a plate with a chemical solution in which a functional material is dissolved or dispersed in a solvent in an inking method using a doctor blade. Step (2): bringing a transfer cylinder into contact with the plate to transfer the chemical solution in the groove structure portion to the transfer cylinder. Step (3): transferring the chemical solution on the transfer cylinder to a predetermined position of the substrate to form the functional film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012209465(A) 申请公布日期 2012.10.25
申请号 JP20110074810 申请日期 2011.03.30
申请人 TOPPAN PRINTING CO LTD 发明人 KINO OSAMU
分类号 H01L29/786;B05D1/28;H01L21/288;H01L21/312;H01L21/336;H01L21/368 主分类号 H01L29/786
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