发明名称 Polycrystal silicon manufacturing apparatus and method of manufacturing polycrystal silicon using the same
摘要 A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.
申请公布号 EP2514520(A1) 申请公布日期 2012.10.24
申请号 EP20110184327 申请日期 2011.10.07
申请人 SILICON VALUE LLC 发明人 JUNG, YUNSUB;KIM, KEUNHO;YOON, YEOKYUN;KIM, TED
分类号 B01J19/00;B01J19/24;C01B33/027 主分类号 B01J19/00
代理机构 代理人
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