发明名称 |
DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin. |
申请公布号 |
EP2084745(A4) |
申请公布日期 |
2012.10.24 |
申请号 |
EP20070832713 |
申请日期 |
2007.11.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
YUKAWA, MIKIO;SUGISAWA, NOZOMU;NAGATA, TAKAAKI;YOSHITOMI, SHUHEI;AIZAWA, MICHIKO |
分类号 |
H01L27/28;G11C13/00;H01L21/02;H01L21/336;H01L27/10;H01L27/12;H01L29/786;H01L51/05 |
主分类号 |
H01L27/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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