发明名称 MEMORY DEVICE AND DRIVING METHOD OF THE MEMORY DEVICE
摘要 PURPOSE: A memory device and a driving method thereof are provided to reduce power consumption by stopping power supply for a short time. CONSTITUTION: An output terminal of one phase inverting device(101) is connected to an input terminal of the other phase inverting device(102) to maintain data. A transistor is provided to one of the phase inverting devices and controls the writing of data in a capacitive element(105). A potential setting unit sets each input terminal and each output terminal of the phase inverting devices with a constant potential.
申请公布号 KR20120116863(A) 申请公布日期 2012.10.23
申请号 KR20120037202 申请日期 2012.04.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TAKEMURA YASUHIKO
分类号 G11C7/10;G11C5/14 主分类号 G11C7/10
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