发明名称 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
摘要 A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.
申请公布号 US8294158(B2) 申请公布日期 2012.10.23
申请号 US20090649718 申请日期 2009.12.30
申请人 PARK BYOUNG-KEON;SEO JIN-WOOK;YANG TAE-HOON;LEE KIL-WON;LEE DONG-HYUN;LISACHENKO MAXIM;LEE KI-YONG;SAMSUNG DISPLAY CO., LTD. 发明人 PARK BYOUNG-KEON;SEO JIN-WOOK;YANG TAE-HOON;LEE KIL-WON;LEE DONG-HYUN;LISACHENKO MAXIM;LEE KI-YONG
分类号 H01L27/14;H01L27/12;H01L27/20 主分类号 H01L27/14
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