发明名称 |
Thin film transistor array panel and method of manufacturing the same |
摘要 |
A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plurality of drain electrodes are formed extending parallel with and adjacent to the data lines. Furthermore, a plurality of storage capacitor conductors are formed to be connected to the drain electrodes and to overlap an adjacent gate line. A passivation layer made of an organic material is formed on the above structure and has a contact hole. Furthermore, a plurality of pixel electrodes are formed to be electrically connected to the drain electrodes through the contact hole. |
申请公布号 |
US8294151(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US20100683739 |
申请日期 |
2010.01.07 |
申请人 |
KIM KYUNG-WOOK;YOUN JOO-AE;LEE SEONG-YEONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KYUNG-WOOK;YOUN JOO-AE;LEE SEONG-YEONG |
分类号 |
G02F1/1368;H01L29/04;G02F1/136;H01L21/336;H01L21/77;H01L21/84;H01L27/02;H01L27/12;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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