| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to be capable of improving step coverage and simplifying process steps. CONSTITUTION: A metal film is excessively deposited on a semiconductor substrate(10). A hard mask pattern is formed on the metal film. A lower metal interconnection(20a) is formed by partially etching the metal film and by over-etching the metal film using the hard mask pattern as a mask. An interlayer dielectric(40) is formed on the resultant structure after the hard mask pattern is removed. The interlayer dielectric is selectively etched to expose the lower metal interconnection. Then, an upper metal interconnection(50) is formed on the resultant structure.
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