发明名称 |
Method of operating non-volatile memory cell |
摘要 |
A method of operating a memory cell for 3D array of this invention is described as follows. Carriers of a first type are injected into a charge storage layer of the memory cell by applying a double-side biased (DSB) voltage to double sides of the memory cell. Carriers of a second type are injected into the charge storage layer by applying FN voltages. |
申请公布号 |
US8295094(B2) |
申请公布日期 |
2012.10.23 |
申请号 |
US201113168536 |
申请日期 |
2011.06.24 |
申请人 |
WU CHAO-I;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
WU CHAO-I |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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