| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of forming a pattern satisfying high sensitivity, high resolution property (for example, high resolution, excellent pattern profile and small line edge roughness (LER)) and good dry etching resistance all the same time, a resist pattern, a crosslinkable negative chemical amplification resist composition for organic solvent development, a resist film and resist-coated mask blanks. <P>SOLUTION: A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit that has a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent. Further provided are a resist pattern, a crosslinkable negative chemical amplification resist composition for organic solvent development, a resist film and resist-coated mask blanks. <P>COPYRIGHT: (C)2013,JPO&INPIT |
