| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit characteristic deterioration of a solid state image pickup device. <P>SOLUTION: A solid state image pickup device of the present embodiment comprises: a photoelectric conversion element 5 provided in a pixel formation region in a semiconductor substrate 10; an insulation film 41 formed on the semiconductor substrate 10 and on the photoelectric conversion element 5 and including at least one salient 4 above the photoelectric element; a wiring layer 31 provided on the insulation film 41; and an insulation film 42 provided on the insulation film 41 and on the wiring layer 31 and including an uneven part 6 having a tilt angle so as to correspond with the salient 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
