Composite conductor structure for semiconductor devices

摘要

In a semiconductor integrated circuit device comprising a memory cell array and peripheral circuitry conductive layers are of three-layer construction consisting of a polycrystalline silicon layer (27) a silicide layer (35) of silicon and a refractory metal formed on the polycrystalline silicon layer, and a refractory metal layer (42) formed on the silicide layer. The refractory metal may be molybdenum, titanium, tantalum or tungsten. The peripheral circuitry has interconnecting lines and MISFET gates formed of such conductive layers.