发明名称 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a structure capable of improving connection reliability between a semiconductor chip and an intermediary substrate and of reducing cost, in a semiconductor device configured by laminating a plurality of semiconductor chips and having an external connection terminal on the intermediary substrate. <P>SOLUTION: A semiconductor device has: a first semiconductor chip having a first through electrode group; a laminated second semiconductor chip having a second through electrode group and a connection terminal group, which is opposed to the first through electrode group of a rear face side of the first semiconductor chip to establish electrical conduction with the first through electrode group; a third semiconductor chip having a connection terminal group, a third through electrode group, a re-wiring layer 44 provided on a surface on an opposite side to the connection terminal group, and an anti-intermediary substrate connection terminal 61 group formed on the surface where the re-wiring layer 44 is present so as to have electrical conduction with the re-wiring layer 44 and having the minimum pitch of arrangement longer than that of the second through electrode group; and a laminated intermediary substrate 100. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012204653(A) 申请公布日期 2012.10.22
申请号 JP20110068505 申请日期 2011.03.25
申请人 DAINIPPON PRINTING CO LTD;SHINKO ELECTRIC IND CO LTD;NEC CORP;TOPPAN PRINTING CO LTD;IBIDEN CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 SHIMADA OSAMU;TAKEUCHI YUKIHARU;GOMYO TOSHIO;BABA KAZUHIRO;TAKEMURA KOICHI;OKUBO RIICHI;SHIMAKURA KEI;SAKAI ATSUSHI;AOYANAGI MASAHIRO;KIKUCHI KATSUYA
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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