| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a resistance element in which a plurality of resistance values are obtained in a predetermined layout area. <P>SOLUTION: A nonvolatile semiconductor memory device comprises: an insulating film 14 that is disposed on a semiconductor substrate 13; a conductive layer 12 that is disposed on the insulating film 14; an insulating film 16 that is disposed on the conductive layer 12; a conductive layer 11A that is disposed on the insulating film 16 and is connected to the conductive layer 12 through an opening; a contact 24A that is connected to the conductive layer 11A; a conductive layer 11B that is disposed on the insulating film 16 and is connected to the conductive layer 12 through an opening; a contact 24B that is connected to the conductive layer 11B; a conductive layer 11C that is disposed on the insulating film 16 and is connected to the conductive layer 12 through an opening; and a contact 24C that is connected to the conductive layer 11C. The conductive layer 12 is formed from the same material as that of a floating gate layer, and the conductive layers 11A, 11B, and 11C are formed from the same material as that of a control gate layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
