SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a structure capable of reducing an area of a peripheral region while enhancing a withstanding voltage at an element peripheral part, and to provide a semiconductor device without reduction in the withstanding voltage in the element peripheral part caused by a CMP step.

SOLUTION: A semiconductor device 100 has: an n-type drift layer 114; a plurality of columnar embedded layers 118 formed in an active region R1 of the n-type drift layer 114 and formed of a p-type semiconductor material; a peripheral withstanding voltage structure 120 having a ring-like second trench 122 formed in a peripheral withstanding voltage region R2, an insulating film 124 formed on an inner surface of the second trench 122, and a conductive material layer 126 formed in the second trench 122 via the insulating film 124, and depleting the n-type drift layer 114 of a part sandwiched between the conductive material layer 126 and the columnar embedded layer 118 at a reverse bias; and one or more second columnar embedded layers 130 formed in a peripheral region R3 and formed of the p-type semiconductor material.

COPYRIGHT: (C)2013,JPO&INPIT