| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a reduced space and low power consumption. <P>SOLUTION: A semiconductor memory device includes: a memory cell array having a memory cell layer including a plurality of memory cells for storing data in different resistance states; and an access circuit for accessing the memory cell via a first wiring line and a second wiring line. In the memory cell, the resistance state transits from a first resistance state to a second resistance state when a predetermined voltage having a first polarity is applied, and transits from the second resistance state to the first resistance state when a predetermined voltage having a second polarity is applied. The access circuit applies a voltage necessary to access the memory cell to the first wiring line and the second wiring line connected to the selected memory cell, and also sets at least one of the first wiring line and the second wiring line connected to the non-selected memory cell to a floating state to access the selected memory cell. <P>COPYRIGHT: (C)2013,JPO&INPIT |
