| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor manufacturing method, which can more effectively reduce on-resistance in a three-dimensional semiconductor element. <P>SOLUTION: A semiconductor element comprises: a drain layer; a drift region selectively provided in the drain layer; a base region selectively provided in the drift region; a source region selectively provided in the base region; in at least one of the source region and the drain region, first and second metal layers selectively provided at least in one of the source region and the drain layer; a trench-shaped gate electrode penetrating, in a direction substantially parallel with a surface of the drain layer, from a part of the source region through the base region adjacent to at least a part of the source region to a part of the drift region; a source electrode connected to the first metal layer; and a drain electrode connected to the drain layer or the second metal layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
