| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the rear-side chipping that may be generated in a dicing step from intruding into an active area where a through electrode exists. <P>SOLUTION: A memory chip 1A is divided into regions of a scribe area SA, a guard ring area GA and an active area AA from a scribe center SC side. In an interlayer insulating film of the scribe area SA, first and second crack stops 3a and 3b for preventing surface-side chipping of the memory chip 1A are provided. A guard ring 4 is provided on the surface side of the guard ring area GA. On the other hand, on a semiconductor substrate 10 side of the guard ring area GA (the rear side of the memory chip 1A), a groove 5A for preventing rear-side chipping is provided. Due to this rear face chipping prevention groove 5A, intrusion of the chipping into a region where a supporting through electrode 2a and a through electrode for a signal and the like are formed can be prevented. <P>COPYRIGHT: (C)2013,JPO&INPIT |
