| 发明名称 |
Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact |
| 摘要 |
Methods and resulting device structures for power trench transistor fabrication, wherein a reachup pillar from the field plate trench is left in place to define the location of a self-aligned contact to the field plate. |
| 申请公布号 |
US2012261746(A1) |
申请公布日期 |
2012.10.18 |
| 申请号 |
US201213418615 |
申请日期 |
2012.03.13 |
| 申请人 |
MAXPOWER SEMICONDUCTOR, INC. |
发明人 |
DARWISH MOHAMED N.;JUN ZENG;BLANCHARD RICHARD A. |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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