SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate that is suitable for manufacturing a hall element having a p-type carrier with sufficient sensitivity.

SOLUTION: A semiconductor substrate comprises: a base substrate whose entire or partial surface is a silicon crystal surface; a blocking body that is located on the base substrate, has an opening reaching the silicon crystal surface, and blocks the growth of the crystal; a first crystal layer that is located on the silicon crystal surface at the bottom of the opening; a pair of first metal layers that are located on the first crystal layer and are disposed apart from each other; and a pair of second metal layers that are located on the first crystal layer and are disposed apart from each other. The first shortest line connecting each of the pair of first metal layers and the second shortest line connecting each of the pair of second metal layers are in a crossing relation or a skew relation to each other.

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