| 摘要 |
A semiconductor device comprises a gate stack, a source region, a drain region, a contact plug and an interlayer dielectric, the gate stack being formed on a substrate, the source region and the drain region being located on opposite sides of the gate stack and embedded in the substrate, the contact plug being embedded in the interlayer dielectric, wherein the contact plug comprises a first portion which is in contact with the source region and/or drain region, the upper surface of the first portion is flushed with the upper surface of the gate stack, and the angle between a sidewall and a bottom surface of the first portion is less than 90°. There is also provided a method for manufacturing a semiconductor device. Not only the contact area between the first portion and the source region and/or the drain region can be increased, which facilitates reducing the contact resistance; but also the distance between the top of the first portion and the top of the gate stack can be increased, which facilitates reducing the possibility of short circuit between the first portion and the gate stack. |
