发明名称 COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF SILICON NITRIDE MATERIALS
摘要 The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, comprises about 0.01 to about 2 percent by weight of a particulate calcined ceria abrasive, about 10 to about 1000 ppm of at least one cationic polymer, optionally, about 10 to about 2000 ppm of a polyoxyalkylene polymer; and an aqueous carrier therefor. The at least one cationic polymer is selected from a poly(vinylpyridine) polymer and a combination of a poly(vinylpyridine) polymer and a quaternary ammonium-substituted polymer. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.
申请公布号 US2012264304(A1) 申请公布日期 2012.10.18
申请号 US201113087857 申请日期 2011.04.15
申请人 WARD WILLIAM 发明人 WARD WILLIAM
分类号 H01L21/306;C09K13/00 主分类号 H01L21/306
代理机构 代理人
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