发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
Transistors formed in one identical diffusion layer and performing complementary operations are generally arranged symmetrically with respect to the diffusion layer. A semiconductor integrated device using a layout capable of partially avoiding restriction on the design of the semiconductor integrated circuit device and reducing the size and economizing the manufacturing cost is provided by breaking the stereotype idea. The size of the semiconductor integrated circuit device can be decreased further by arranging two transistors formed in one identical diffusion layer and conducting complementary operations by intentionally arranging them in an asymmetric pattern. |
申请公布号 |
US2012262978(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213438731 |
申请日期 |
2012.04.03 |
申请人 |
TAKAHASHI HIROYUKI;YAMANO SEIYA;RENESAS ELECTRONICS CORPORATION |
发明人 |
TAKAHASHI HIROYUKI;YAMANO SEIYA |
分类号 |
G11C5/06;H01L27/088 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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