PROCESS MONITOR APPARATUS USED IN SUBSTRATE PROCESSING APPARATUS, PROCESS MONITOR METHOD, AND SUBSTRATE PROCESSING APPARATUS

摘要

A process monitor apparatus (11) is provided with: a light source section, which outputs light; a light detecting section, which can detect intensity of light; a first light path (21), which guides the light outputted from the light source section to a wafer (W), and guides reflected waves reflected from the wafer (W) to the light detecting section; a second light path, which is configured to have light propagation characteristics equivalent to those of the first light path (21), and guides the light outputted from the light source section to the light detecting section without having the light pass through the wafer (W); and a controller (17), which corrects intensity information of the light detected by means of the light detecting section via the first light path (21), on the basis of intensity information of the light detected by means of the light detecting section via the second light path, and analyzes the structure of the wafer (W).