发明名称 Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation
摘要 Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
申请公布号 US2012264247(A1) 申请公布日期 2012.10.18
申请号 US201113086787 申请日期 2011.04.14
申请人 PENG LUNG-HAN;YU JENG-WEI;YEH PO-CHUN;OPTO TECH CORPORATION 发明人 PENG LUNG-HAN;YU JENG-WEI;YEH PO-CHUN
分类号 H01L33/32;H01L21/268 主分类号 H01L33/32
代理机构 代理人
主权项
地址