发明名称 DIE BONDER AND SEMICONDUCTOR MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a highly-reliable die bonder capable of surely peeling a die from a wafer even if the die size is larger than a maximum irradiation area of ultraviolet light irradiation means, or to provide a highly-reliable semiconductor manufacturing method using the die bonder. <P>SOLUTION: A semiconductor manufacturing method includes: a peeling step of vacuum-adsorbing a die by adsorption means provided with a bonding head at its tip to peel the die from a wafer; a mounting step of bonding the peeled die to a substrate; an irradiation step of irradiating a prescribed irradiation region of an adhesive tape for dicing containing a gas generating agent generating gas when irradiated with ultraviolet light and adhesively holding the die with the ultraviolet light from an irradiation part; and a movement step of relatively moving the adhesive tape for dicing and the irradiation part. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012199443(A) 申请公布日期 2012.10.18
申请号 JP20110063356 申请日期 2011.03.22
申请人 HITACHI HIGH-TECH INSTRUMENTS CO LTD 发明人 MAKI HIROSHI
分类号 H01L21/52;H01L21/301 主分类号 H01L21/52
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