| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a high quality graphene having crystal defect as less as possible and resistance lower than the related art. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate; and wiring provided above the semiconductor substrate. A portion of a promoter layer, which contacts a catalyst layer has a face-centered cubic structure or a hexagonal close-packed structure, and (111) face of the face-centered cubic structure or (002) face of the hexagonal close-packed structure is directed parallel to a surface of the semiconductor substrate. Alternatively, the portion of the promoter layer, which contacts the catalyst layer has an amorphous structure or a microcrystalline structure. The catalyst layer has a face-centered cubic structure or a hexagonal close-packed structure, and (111) face of the face-centered cubic structure or (002) face of the hexagonal close-packed structure is directed parallel to the surface of the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
