FABRICATION OF N-DOPED ZNO TRANSPARENT CONDUCTIVE OXIDE FILMS

摘要

PURPOSE: A method for manufacturing a zinc oxide transparent conductive film is provided to uniformly form the thickness of a thin film and to improve quality with low resistance. CONSTITUTION: A zinc source is adsorbed on a substrate inside a reactor. Mixing gas is provided to the substrate in which the zinc source is adsorbed as plasma shape. An oxidation zinc thin film which is doped with nitrogen is grown up. The zinc source is provided to the substrate placed inside the reactor as gas phase. The temperature of the reactor is maintained at 120 to 250degrees for 8 to 24 hours.