MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent water or hydrogen to be entered in an oxide semiconductor layer by forming an oxide aluminum film on an insulating layer and a gate electrode layer. CONSTITUTION: A gate insulating layer(110) is formed on an oxide semiconductor layer(106). A gate electrode layer(112) is formed on the oxide semiconductor layer. The gate insulating layer is placed between the oxide semiconductor layer and the gate electrode layer. An oxide aluminum film is formed on the gate electrode layer. A thermal process is processed to the oxide semiconductor layer. The thickness of the oxide aluminum film is 50nm to 500nm. An inter-layer insulating film is formed on the oxide aluminum film.