Organic field effect transistor and its production method

摘要

An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2═CHCOO—(CH2)2—CN  (1) and/or a monomer represented by the formula (2): CH2═C(CH3)COO—(CH2)2—CN  (2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.