Power MOS device fabrication

摘要

Fabricating a semiconductor device includes forming a hard mask on the substrate having a top substrate surface; forming a gate trench in the substrate, through the hard mask; depositing gate material in the gate trench; removing the hard mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; and disposing an anti-punch through implant along at least a section of the trench wall but not along the trench bottom.