发明名称 |
Method for producing a semiconductor |
摘要 |
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. |
申请公布号 |
US8288258(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20100769976 |
申请日期 |
2010.04.29 |
申请人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT;TIMME HANS-JOERG;WERNER WOLFGANG;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT;TIMME HANS-JOERG;WERNER WOLFGANG |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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