发明名称 |
Photoelectric conversion element, photoelectric conversion device, and image sensor |
摘要 |
A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.
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申请公布号 |
US8288775(B2) |
申请公布日期 |
2012.10.16 |
申请号 |
US20090509037 |
申请日期 |
2009.07.24 |
申请人 |
MATSUMOTO TOMOTAKA;EGUCHI TSUKASA;SEIKO EPSON CORPORATION |
发明人 |
MATSUMOTO TOMOTAKA;EGUCHI TSUKASA |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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