| 摘要 |
There is provided a substrate processing apparatus, comprising: a processing chamber in which a plurality of substrates are housed, the substrate having thereon a lamination film composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a porous coating film having a void rate of 5% to 15% mainly composed of a mixture of chromium oxide (CrxOy:x, y are arbitrary integer of 1 or more) silica is formed on a surface exposed to at least the elemental selenium-containing gas or the elemental sulfur-containing gas, out of the surface of the reaction tube on the processing chamber side.
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