| 摘要 |
PURPOSE: A vertical batch-type film depositing apparatus is provided to control the difference between a deposition amount to a semiconductor wafer piled on an upper end of a wafer boat and a deposition amount to the semiconductor wafer piled on a bottom end of the wafer boat. CONSTITUTION: A process chamber(101) integrally performs deposition for a plurality of processed objects(W). A heater(131) heats the plurality of processed objects received to the process chamber. An exhaust device(130) exhausts the inside of the process chamber. A receiving container(102) receives the process chamber. A gas supply device(120) supplies process gas to the inside of the receiving container. [Reference numerals] (126a) Silicon source gas supply source; (126b) Source gas supply source containing an oxidizing agent; (126c) Source gas supply source containing a nitration agent; (126d) Source gas supply source containing boron; (126e) Inert gas source gas supply source; (130) Exhaust mechanism; (150) Controller; (151) User interface; (152) Memory portion
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