发明名称 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To perform high-concentration diffusion of Zn ions on a photoelectric conversion layer and to achieve simplification in manufacturing process and facility cost, in a method for manufacturing a photoelectric conversion element. <P>SOLUTION: A method for manufacturing a photoelectric conversion element includes the steps of: preparing a reaction liquid including at least one Zn source and at least one alkali agent selected from the group consisting of ammonia and an ammonium salt, having concentration of the Zn source of 0.1 M or higher and concentration of the alkali agent of 2 M or lower, and having a pH of 9-13; immersing a substrate including a lower electrode and a photoelectric conversion layer which are laminated in the reaction liquid adjusted to a predetermined temperature of 20-45&deg;C to be maintained for a predetermined time, so that Zn ions are diffused in the photoelectric conversion layer; and immersing the substrate including the lower electrode and the photoelectric conversion layer which are laminated and having undergone the diffusion step in the reaction liquid adjusted to a predetermined temperature of 55-90&deg;C to deposit a ZnO layer as a high-resistance oxide layer on the photoelectric conversion layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195416(A) 申请公布日期 2012.10.11
申请号 JP20110057820 申请日期 2011.03.16
申请人 FUJIFILM CORP 发明人 KONO TETSUO;KAGA HIROSHI
分类号 H01L31/04;H01L21/368 主分类号 H01L31/04
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