发明名称 |
Multilayer Rare Earth Device |
摘要 |
Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
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申请公布号 |
US2012256232(A1) |
申请公布日期 |
2012.10.11 |
申请号 |
US201113251086 |
申请日期 |
2011.09.30 |
申请人 |
CLARK ANDREW;ARKUN F. ERDEM;LEBBY MICHAEL;TRANSLUCENT, INC. |
发明人 |
CLARK ANDREW;ARKUN F. ERDEM;LEBBY MICHAEL |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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