| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal by a solution method, capable of soaking the inside of a growth furnace, and suppressing generation of a SiC polycrystal near a seed crystal. <P>SOLUTION: This method for producing a SiC single crystal using a solution method SiC single crystal production apparatus 1 includes: a growth furnace 4 having a seed crystal 3 for growing a SiC single crystal on a SiC seed crystal substrate from a raw material solution 2 by a solution method; a support shaft 5 for supporting the seed crystal 3, and transferring heat from the seed crystal 3 to the outside of the growth furnace 4; a crucible 6 for storing the raw material solution 2; a support part 8 for holding the crucible 6 at a distance from an inner wall in the growth furnace 4; and an energy releasing body 9 arranged outside the growth furnace 4 surrounding the growth furnace 4; wherein a heat transfer anisotropic support part 11 constituted of a member having a relation: TC<SB POS="POST">H</SB><TC<SB POS="POST">V</SB>between a thermal conductivity (TC<SB POS="POST">V</SB>) in a direction in which the crucible 6 is supported and a thermal conductivity (TC<SB POS="POST">H</SB>) in a direction vertical to the direction is used as at least a part of the support part 8. <P>COPYRIGHT: (C)2013,JPO&INPIT |
