| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent re-reflection of reflected electrons or secondary electrons emitted from a sample surface to the sample surface side, and to increase the amount of electrons detected by an electron detector. <P>SOLUTION: The electron beam irradiation device comprises an objective lens 10 for irradiating a sample surface 20 with an electron beam, an electron detector 30 interposed between the objective lens 10 and the sample surface 20 and detecting the reflected electrons or the secondary electrons emitted from the sample surface 20, and an antireflection mechanism 40 interposed between the electron detector 30 and the sample surface 20 and preventing re-reflection of the reflected electrons or the secondary electrons emitted from the sample surface 20 to the sample surface 20 side. The antireflection mechanism 40 has a plurality of holes 42 along the helical trajectory of the reflected electrons or the secondary electrons from the sample surface 20. <P>COPYRIGHT: (C)2013,JPO&INPIT |
