发明名称 FILM-LIKE WAFER MOLD MATERIAL, MOLDED WAFER, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a film-like wafer mold material which has excellent transfer performance for a large diameter thin film wafer, exhibits low warpage and good wafer protection performance after molding, and is used suitably in wafer level package. <P>SOLUTION: The film-like wafer mold material for molding a wafer collectively has a multilayer structure consisting at least of a first film layer, and a second film layer on the first film layer. The first film layer contains a silicon skeleton-containing polymer compound, a crosslinking agent, and a filler, and the second film layer contains a silicon skeleton-containing polymer compound, a crosslinking agent, and a filler. When the inclusion rate of filler in the first film layer is 100, the content of filler in the second film layer is more than 0 to less than 100. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012195458(A) 申请公布日期 2012.10.11
申请号 JP20110058464 申请日期 2011.03.16
申请人 SHIN ETSU CHEM CO LTD 发明人 SUGAO MICHIHIRO;KONDO KAZUNORI
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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